13 March 2018 Developing a flexible model of electron scattering in solid for charging analysis
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Abstract
We have been developing a charging simulator “CHARMs”, which is based on 3D finite element method, to predict the characteristics of signal from charged pattern on surface of semi-conductor during the SEM observation. We have constructed a new flexible model to simulate the in-solid electron scattering by the Langevin equation for “CHARMs”. Our new model can manipulate the size of the diffusion cloud of scattering electron by the parameters of it and calculate ten times faster than the conventional Monte Carlo (MC) method. In addition to that, the model has the possibility to accurately describe the scattering of low energy electron. We also confirmed that the same results of the conventional MC method can be obtained from the simulation model of metal pattern buried in the sample.
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Chahn Lee, Chahn Lee, Toshiyuki Yokosuka, Toshiyuki Yokosuka, Hideyuki Kazumi, Hideyuki Kazumi, } "Developing a flexible model of electron scattering in solid for charging analysis", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105852E (13 March 2018); doi: 10.1117/12.2297371; https://doi.org/10.1117/12.2297371
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