In-depth analysis and characterization of a dual damascene process with respect to different CD

Gerd Krause; Detlef Hofmann; Boris Habets; Stefan Buhl; Manuela Gutsch; Alberto Lopez-Gomez; Wan-Soo Kim; Xaver Thrun

doi:10.1117/12.2302971

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13 March 2018 In-depth analysis and characterization of a dual damascene process with respect to different CD

Gerd Krause, Detlef Hofmann, Boris Habets, Stefan Buhl, Manuela Gutsch, Alberto Lopez-Gomez, Wan-Soo Kim, Xaver Thrun

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Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 105852T (2018) https://doi.org/10.1117/12.2302971
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

In a 200 mm high volume environment, we studied data from a dual damascene process. Dual damascene is a combination of lithography, etch and CMP that is used to create copper lines and contacts in one single step. During these process steps, different metal CD are measured by different measurement methods. In this study, we analyze the key numbers of the different measurements after different process steps and develop simple models to predict the electrical behavior* . In addition, radial profiles have been analyzed of both inline measurement parameters and electrical parameters. A matching method was developed based on inline and electrical data. Finally, correlation analysis for radial signatures is presented that can be used to predict excursions in electrical signatures.

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Gerd Krause, Detlef Hofmann, Boris Habets, Stefan Buhl, Manuela Gutsch, Alberto Lopez-Gomez, Wan-Soo Kim, and Xaver Thrun "In-depth analysis and characterization of a dual damascene process with respect to different CD", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105852T (13 March 2018); https://doi.org/10.1117/12.2302971

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