Toward reliable and repeatable automated STEM-EDS metrology with high throughput

Zhenxin Zhong; Jason Donald; Gavin Dutrow; Justin Roller; Ozan  Ugurlu; Martin  Verheijen; Oleksii Bidiuk

doi:10.1117/12.2297403

13 March 2018 Toward reliable and repeatable automated STEM-EDS metrology with high throughput

Zhenxin Zhong; Jason Donald; Gavin Dutrow; Justin Roller; Ozan Ugurlu; Martin Verheijen; Oleksii Bidiuk

Author Affiliations +

Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 105852X (2018) https://doi.org/10.1117/12.2297403
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

New materials and designs in complex 3D architectures in logic and memory devices have raised complexity in S/TEM metrology. In this paper, we report about a newly developed, automated, scanning transmission electron microscopy (STEM) based, energy dispersive X-ray spectroscopy (STEM-EDS) metrology method that addresses these challenges. Different methodologies toward repeatable and efficient, automated STEM-EDS metrology with high throughput are presented: we introduce the best known auto-EDS acquisition and quantification methods for robust and reliable metrology and present how electron exposure dose impacts the EDS metrology reproducibility, either due to poor signalto-noise ratio (SNR) at low dose or due to sample modifications at high dose conditions. Finally, we discuss the limitations of the STEM-EDS metrology technique and propose strategies to optimize the process both in terms of throughput and metrology reliability.

Citation Download Citation

Zhenxin Zhong, Zhenxin Zhong, Jason Donald, Jason Donald, Gavin Dutrow, Gavin Dutrow, Justin Roller, Justin Roller, Ozan Ugurlu, Ozan Ugurlu, Martin Verheijen, Martin Verheijen, Oleksii Bidiuk, Oleksii Bidiuk, } "Toward reliable and repeatable automated STEM-EDS metrology with high throughput", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105852X (13 March 2018); doi: 10.1117/12.2297403; https://doi.org/10.1117/12.2297403

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