13 March 2018 Shot-noise limited throughput of soft x-ray ptychography for nanometrology applications
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Due to its potential for high resolution and three-dimensional imaging, soft x-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft x-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm2 , and a full three-dimensional measurement takes roughly 6 hours per μm2 . Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm2 is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput.
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Wouter Koek, Wouter Koek, Bastiaan Florijn, Bastiaan Florijn, Stefan Bäumer, Stefan Bäumer, Rik Kruidhof, Rik Kruidhof, Hamed Sadeghian, Hamed Sadeghian, "Shot-noise limited throughput of soft x-ray ptychography for nanometrology applications", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058533 (13 March 2018); doi: 10.1117/12.2306488; https://doi.org/10.1117/12.2306488

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