13 March 2018 EUV via hole pattern fidelity enhancement through novel resist and post-litho plasma treatment
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Abstract
Extreme UV(EUV) technology must be potential solution for sustainable scaling, and its adoption in high volume manufacturing(HVM) is getting realistic more and more. This technology has a wide capability to mitigate various technical problem in Multi-patterning (LELELE) for via hole patterning with 193-i. It induced local pattern fidelity error such like CDU, CER, Pattern placement error. Exactly, EUV must be desirable scaling-driving tool, however, specific technical issue, named RLS (Resolution-LER-Sensitivity) triangle, obvious remaining issue. In this work, we examined hole patterning sensitizing (Lower dose approach) utilizing hole patterning restoration technique named “CD-Healing” as post-Litho. treatment.
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Hidetami Yaegashi, Kyohei Koike, Carlos Fonseca, Fumiko Yamashita, Kumar Kaushik, Shinya Morikita, Kiyohito Ito, Shota Yoshimura, Vadim Timoshkov, Mark Maslow, Tae Kwon Jee, Liesbeth Reijnen, Peter Choi, Mu Feng, Chris Spence, Stijn Schoofs, "EUV via hole pattern fidelity enhancement through novel resist and post-litho plasma treatment", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 1058605 (13 March 2018); doi: 10.1117/12.2297661; https://doi.org/10.1117/12.2297661
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