27 March 2018 EUV resist sensitization and roughness improvement by PSCAR with in-line UV flood exposure system
Author Affiliations +
Abstract
Photosensitized Chemically Amplified ResistTM (PSCARTM) **2.0’s advantages and expectations are reviewed in this paper. Alpha PSCAR in-line UV exposure system (“Litho Enhancer”) was newly installed at imec in a Tokyo Electron Ltd. (TELTM)’s CLEAN TRACKTM LITHIUS ProTM Z connected to an ASML’s NXE:3300. Using the Litho Enhancer, PSCAR 2.0 sensitization preliminary results show that suppression of roughness enhancement may occur while sensitivity is increased. The calibrated PSCAR 2.0 simulator is used for prediction of resist formulation and process optimization. The simulation predicts that resist contrast enhancement could be realized by resist formulation and process optimization with UV flood exposure.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiji Nagahara, Michael Carcasi, Gosuke Shiraishi, Yuya Kamei, Kathleen Nafus, Yukie Minekawa, Hiroyuki Ide, Yoshihiro Kondo, Takahiro Shiozawa, Keisuke Yoshida, Masashi Enomoto, Kosuke Yoshihara, Hideo Nakashima, Serge Biesemans, Ryo Shimada, Masaru Tomono, Kazuhiro Takeshita, Teruhiko Moriya, Hayakawa Makoto, Ryo Aizawa, Yoshitaka Konishi, Masafumi Hori, Ken Maruyama, Hisashi Nakagawa, Masayuki Miyake, Tomoki Nagai, Satoshi Dei, Takehiko Naruoka, Motoyuki Shima, Toru Kimura, Geert Vandenberghe, John S. Petersen, Danilo De Simone, Foubert Philippe, Hans-Jürgen Stock, Balint Meliorisz, Akihiro Oshima, Seiichi Tagawa, "EUV resist sensitization and roughness improvement by PSCAR with in-line UV flood exposure system", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 1058606 (27 March 2018); doi: 10.1117/12.2297498; https://doi.org/10.1117/12.2297498
PROCEEDINGS
11 PAGES + PRESENTATION

SHARE
Back to Top