13 March 2018 Investigations on EUVL metal resist dissolution behavior using in situ high-speed atomic force microscopy
Author Affiliations +
Abstract
An in situ resist dissolution analysis of a ZrOx-based metal resist in a typical organic solvent developer [e.g., normal butyl acetate (nBA)] revealed three types of dissolution behaviors: “nano-swelling” at the film surface, “nonuniform dissolution” in the mid-film region, and “resist residue” at the bottom. Attributed to the presence of metal resist film depth inhomogeneities, these dissolution behaviors can impact the EUVL imaging performance of the metal resists. Based on the results obtained, it was also found that developer polarity plays a significant role in obtaining a more uniform or stable dissolution characteristic for metal resists.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Julius Joseph Santillan, Julius Joseph Santillan, Toshiro Itani, Toshiro Itani, } "Investigations on EUVL metal resist dissolution behavior using in situ high-speed atomic force microscopy", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860F (13 March 2018); doi: 10.1117/12.2294585; https://doi.org/10.1117/12.2294585
PROCEEDINGS
6 PAGES


SHARE
Back to Top