13 March 2018 Novel EUV resist materials for 7 nm node and beyond
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For semiconductor device manufacturing, line width roughness (LWR) and defect reduction is one of the most important items to obtain high yield. In this study we described the development of novel high absorption resists for use in extreme ultra violet (EUV) lithography system and its LWR and nano-bridge reduction capability. Herein decomposition rates of photo acid generator (PAG) and several high EUV absorption compounds were studied to clarify inefficient pass on acid generation mechanism. As a result, it is revealed that existence of decomposition pass on high EUV absorption compounds degenerates PAG decomposition efficiency. New high absorption materials were synthesized with taking into account its decomposition durability and its lithographic performance were investigated. 15-20% dose reduction keeping its LWR value and nano-bridge reduction were observed even at lower dose condition compared to non-high absorption platform.
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Hajime Furutani, Hajime Furutani, Michihiro Shirakawa, Michihiro Shirakawa, Wataru Nihashi, Wataru Nihashi, Kyohei Sakita, Kyohei Sakita, Hironori Oka, Hironori Oka, Mitsuhiro Fujita, Mitsuhiro Fujita, Tadashi Omatsu, Tadashi Omatsu, Toru Tsuchihashi, Toru Tsuchihashi, Nishiki Fujimaki, Nishiki Fujimaki, Toru Fujimori, Toru Fujimori, "Novel EUV resist materials for 7 nm node and beyond", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860G (13 March 2018); doi: 10.1117/12.2297076; https://doi.org/10.1117/12.2297076


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