13 March 2018 Study of electron beam and extreme ultraviolet resist utilizing polarity change and radical crosslinking
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Abstract
Chemically amplified resists have been used for the fabrication of semiconductor devices. With the miniaturization of circuits, the performance of chemically amplified resists approaches their limit due to the acid diffusion. The development of a novel platform without acid diffusion becomes important. In this study, we proposed a negative-type polymer resist used for extreme ultraviolet (EUV) and electron beam (EB) lithography. The proposed resist utilizes polarity change and radical crosslinking triggered by EUV/EB exposure. Polymers having triarylsulfonium cations and 2,2,2-trisubstitued acetophenone as side chains were designed for realizing the dual insolubilization property. 2,2,2- trisubstitued acetophenone was incorporated for the efficient radical generation on the polymer structure for the crosslinking. An onium salt was incorporated for the efficient use of thermalized electrons for the polarity change and the radical generation of the side chain. In addition, triphenyl-(4-vinyl-phenyl)-stannane (StTPSn) was incorporated into the resist polymer as the EUV/EB absorber to enhance sensitivity. The highly sensitive property of the designed polymers was demonstrated.
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Satoshi Enomoto, Takumi Yoshino, Kohei Machida, Takahiro Kozawa, "Study of electron beam and extreme ultraviolet resist utilizing polarity change and radical crosslinking", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860H (13 March 2018); doi: 10.1117/12.2297392; https://doi.org/10.1117/12.2297392
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