13 March 2018 The development of an SC1 removable si-anti-reflective-coating
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Abstract
A trilayer stack of spin-on-carbon (SOC), silicon anti-reflective coating (SiARC) and photoresist (PR) is often used to enable high resolution implant layers for integrated circuit manufacturing. Damage to substrates from SiARC removal using dry etching or aqueous hydrogen fluoride has increased the demand for innovative SiARC materials for implant lithography process. Wet strippable SiARCs (WS-SiARCs) capable of stripping under mild conditions such as SC1 (ammonium hydroxide/hydrogen peroxide/water) while maintaining key performance metrics of standard SiARCs is highly desirable. Minimizing the formation of Si-O-Si linkages by introducing organic crosslink sites was effective to impart SC1 solubility particularly after O2 dry etching. Incorporation of acidic groups onto the crosslinking site further improved SC1 solubility. A new siloxane polymer architecture that has SC1 active functionality in the polymer backbone was developed to further enhance SC1 solubility. A new SiARC formulation based on the new siloxane polymer achieved equivalent lithographic performances to a classic SiARC and SC1 strip rate >240Å/min under a relatively low concentration SC1 condition such as ammonium hydroxide/hydrogen peroxide/water=1/1/40.
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Shintaro Yamada, Shintaro Yamada, Iou-Sheng Ke, Iou-Sheng Ke, Charlotte Cutler, Charlotte Cutler, Li Cui, Li Cui, Paul LaBeaume, Paul LaBeaume, Daniel Greene, Daniel Greene, Bhooshan Popere, Bhooshan Popere, Chris Sullivan, Chris Sullivan, JoAnne Leonard, JoAnne Leonard, Suzanne Coley, Suzanne Coley, Sabrina Wong, Sabrina Wong, Owendi Ongayi, Owendi Ongayi, Jim Cameron, Jim Cameron, Michael B. Clark, Michael B. Clark, Thomas C. Fitzgibbons, Thomas C. Fitzgibbons, } "The development of an SC1 removable si-anti-reflective-coating", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860L (13 March 2018); doi: 10.1117/12.2297687; https://doi.org/10.1117/12.2297687
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