28 March 2018 New spin on carbon materials made from hemicellulose for hardmask layer
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Abstract
Hemicellulose spin on carbon (SOC) material was newly developed for hardmask layer. For next generation lithography, high etching selectivity is strongly required. However, there is an issue of a balance of cost and etching selectivity in conventional process. Hemicellulose spin on carbon material is able to overcome this issue by virtue of its chemical structure and newly-developed reactive hemicellulose hardening (R2H). R2H means that hemicellulose unit is selectively hardened by chemical reaction. In this study, deep L/S and hole patterns were fabricated by using hemicellulose SOC with R2H and its dry etching selectivity was 26. Additionally, compatibility with EUV lithography was confirmed. Favorable pattern made of resist for EUV lithography was obtained on Hemicellulose SOC and successfully transferred into hemicellulose SOC.
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Kazuyo Morita, Kazuyo Morita, Kimiko Yamamoto, Kimiko Yamamoto, Koki Hongo, Koki Hongo, Masahiko Harumoto, Masahiko Harumoto, Yuji Tanaka, Yuji Tanaka, Chisayo Nakayama, Chisayo Nakayama, You Arisawa, You Arisawa, Harold Stokes, Harold Stokes, Masaya Asai, Masaya Asai, } "New spin on carbon materials made from hemicellulose for hardmask layer", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860M (28 March 2018); doi: 10.1117/12.2297333; https://doi.org/10.1117/12.2297333
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