9 April 2018 Multi-color fly-cut-SAQP for reduced process variation
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Multi-patterning processes such as self-aligned double patterning (SADP) and self-aligned quadruple patterning (SAQP) present new challenges to the semiconductor device manufacturing such as increased relative cost to previous nodes, longer cycle times, and increased (local) edge placement error between grid and cut/block layers. As the scaling requirements continue, the factors driving both EPE and electrical yield such as overlay, critical dimension control (CDU) and stochastics (LCDU) become greater concerns to multi-patterning. In addition to lithographic process variations, the unit processes such as plasma/vapor etch, deposition, wet/cleans can contributes additional variation in spacer/mandrel profiles leading to poor CDU control and ultimately within-wafer pitch walking. In this paper, we outline alternative SAQP integration schemes to improve the feature profile of both mandrel and spacer to minimize process variability. This patterning scheme designated as fly-cut SAQP introduces new concepts such top spacer removal by chemical-mechanical planarization, mandrel foot mitigation layers, multi-layered mandrel for accurate polish end-point and void-free gap fill to realize high fidelity transfer to the underlying hardmask. Finally, we will demonstrate the effectiveness for this new integration scheme as a candidate for multi-color/self-aligned block (SAB) and highlight the additional benefits of using such an approach.
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Richard A. Farrell, Richard A. Farrell, Elliott Franke, Elliott Franke, Kanda Tapily, Kanda Tapily, Jodi Hotalen, Jodi Hotalen, David O'Meara, David O'Meara, Angelique Raley, Angelique Raley, Akitero Ko, Akitero Ko, Peter Biolsi, Peter Biolsi, Cory Wajda, Cory Wajda, Gert Leusink, Gert Leusink, Anton DeVilliers, Anton DeVilliers, David Hetzer, David Hetzer, } "Multi-color fly-cut-SAQP for reduced process variation", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 1058611 (9 April 2018); doi: 10.1117/12.2303004; https://doi.org/10.1117/12.2303004

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