13 March 2018 Directed Self-Assembly (DSA) for contact applications
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Abstract
Directed self-assembly (DSA) of block copolymers offers opportunities for resolution enhancement of existing patterning by pitch splitting, contact hole (CH) shrinks or, improvement of pattern profile or patterning window.1-2 By co-optimization of guiding pattern geometry, guiding pattern profile, block copolymer formulation, pattern transfer steps, the after-etch DSA patterns meet target pitch ratio. This DSA assessment shows combination of DSA and single iArF-patterning has potential to meet the specific CD dimension and pitch requirement of a conventional patterns that requires double-patterning.
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Ming-Hui Weng, Ming-Hui Weng, Tsung-Han Ko, Tsung-Han Ko, Chih-Jie Lee, Chih-Jie Lee, Han-Ping Shen, Han-Ping Shen, Chieh-Han Wu, Chieh-Han Wu, Ken-Hsien Hsieh, Ken-Hsien Hsieh, Yuan-Chien Huang, Yuan-Chien Huang, Cheng-Han Wu, Cheng-Han Wu, Chung-Ju Lee, Chung-Ju Lee, Ching-Yu Chang, Ching-Yu Chang, Chin-Hsiang Lin, Chin-Hsiang Lin, } "Directed Self-Assembly (DSA) for contact applications", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105861D (13 March 2018); doi: 10.1117/12.2303492; https://doi.org/10.1117/12.2303492
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