13 March 2018 Fast annealing DSA materials designed for sub-5 nm resolution
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In recent years, high-χ block copolymers (BCPs) have been reported to achieve sub-5 nm resolution. These BCPs always require long annealing time at high annealing temperature, which may limit their implementation into semiconductor process. Since hot baking time in conventional semiconductor process is normally less than 3 minutes, how to shorter the thermal annealing time at lower temperature becomes a new topic for the sub-5 nm high-χ BCPs. In this manuscript, various fluoro-containing BCPs are synthesized by living anionic polymerization or atom transfer radical polymerization. The best BCP formed thermal equilibrium sub-5 nm nano domains after mere 1 min annealing at temperature lower than 100 °C, which is the fastest thermal annealing process reported so far. BCPs with various morphology and domain size are obtained by precise control of both the length and the molar ratio of the two blocks. The resulted smallest half-pitch of the BCPs are less than 5 nm in lamella and hexagonal morphologies. Linear and starshaped BCPs containing PMMA and fluoro-block are also synthesized, which also shows best phase separation into ca. 6 nm half-pitch, however, the annealing time is 1 hour at 180 °C.
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Hai Deng, Hai Deng, Xuemiao Li, Xuemiao Li, Yu Peng, Yu Peng, Jianuo Zhou, Jianuo Zhou, } "Fast annealing DSA materials designed for sub-5 nm resolution", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105861E (13 March 2018); doi: 10.1117/12.2307288; https://doi.org/10.1117/12.2307288

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