13 March 2018 Desirable material selection on self-aligned multi-patterning
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For self-aligned multiple patterning, higher etch selectivity between mandrel and spacer is desired to lessen roughness, and thereby prevent pitch walk. We selected dual carbon layers as mandrels and silicon oxide films as spacers for a new self-aligned quadruple patterning process since they potentially provide infinite etch selectivity. We gained insolubility and etch selectivity between two carbon layers by infiltrating trimethylsilyldimethylamine into one of the carbon layers under the ambient atmosphere. Significantly, neither necking nor recess were observed when the spin-on-glass antireflective coating was removed. Thus, a SAQP scheme was developed and successfully demonstrated a sub15-nm halfpitch pattern. Additionally, this scheme improves affordability since all the processes can be performed in the ambient pressure within a coater module.
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Kyohei Koike, Kyohei Koike, Kazuki Yamada, Kazuki Yamada, Masatoshi Yamato, Masatoshi Yamato, Hidetami Yaegashi, Hidetami Yaegashi, Takehiro Seshimo, Takehiro Seshimo, Takahiro Dazai, Takahiro Dazai, Katsumi Ohmori, Katsumi Ohmori, } "Desirable material selection on self-aligned multi-patterning", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105861F (13 March 2018); doi: 10.1117/12.2297297; https://doi.org/10.1117/12.2297297

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