13 March 2018 Effects of fluorine contamination on spin-on dielectric thickness in semiconductor manufacturing
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Abstract
In the recent semiconductor industry, as the device shrinks, spin-on dielectric (SOD) has been adopted as a widely used material because of its excellent gap-fill, efficient throughput on mass production. SOD film must be uniformly thin, homogeneous and free of particle defects because it has been perfectly perserved after chemical-mechanical polishing (CMP) and etching process. Spin coating is one of the most common techniques for applying SOD thin films to substrates. In spin coating process, the film thickness and uniformity are strong function of the solution viscosity, the final spin speed and the surface properties. Especially, airborne molecular contaminants (AMCs), such as HF, HCl and NH3, are known to change to surface wetting characteristics. In this work, we study the SOD film thickness as a function of fluorine contamination on the wafer surface. To examine the effects of airborne molecular contamination, the wafers are directly exposed to HF fume followed by SOD coating. It appears that the film thickness decreases by higher contact angle on the wafer surface due to fluorine contamination. The thickness of the SOD film decreased with increasing fluorine contamination on the wafer surface. It means that the wafer surface with more hydrophobic property generates less hydrogen bonding with the functional group of Si-NH in polysilazane(PSZ)-SOD film. Therefore, the wetting properties of silicon wafer surfaces can be degraded by inorganic contamination in SOD coating process.
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Hyoung-ryeun Kim, Hyoung-ryeun Kim, Soonsang Hong, Soonsang Hong, Samyoung Kim, Samyoung Kim, Changyeol Oh, Changyeol Oh, Sung Min Hwang, Sung Min Hwang, } "Effects of fluorine contamination on spin-on dielectric thickness in semiconductor manufacturing", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105861M (13 March 2018); doi: 10.1117/12.2297309; https://doi.org/10.1117/12.2297309
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