PROCEEDINGS VOLUME 10587
SPIE ADVANCED LITHOGRAPHY | 25 FEBRUARY - 1 MARCH 2018
Optical Microlithography XXXI
Editor(s): Jongwook Kye
Proceedings Volume 10587 is from: Logo
SPIE ADVANCED LITHOGRAPHY
25 February - 1 March 2018
San Jose, California, United States
Front Matter: Volume 10587
Proc. SPIE 10587, Front Matter: Volume 10587, 1058701 (14 May 2018); doi: 10.1117/12.2324760
Keynote Session
Proc. SPIE 10587, Advances in MOEMS technologies for high quality imaging systems, 1058703 (20 March 2018); doi: 10.1117/12.2297399
Advanced Process Control I
Proc. SPIE 10587, Co-optimization of exposure dose and etch process for SAQP pitch walk control, 1058704 (20 March 2018); doi: 10.1117/12.2297345
Proc. SPIE 10587, Tunable bandwidth for application-specific SAxP process enhancement, 1058705 (20 March 2018); doi: 10.1117/12.2300511
Proc. SPIE 10587, High-fidelity lithography against stochastic effects (Conference Presentation), 1058706 (20 March 2018); doi: 10.1117/12.2297558
Proc. SPIE 10587, Roughness power spectral density as a function of resist parameters and its impact through process, 1058707 (23 March 2018); doi: 10.1117/12.2297690
Proc. SPIE 10587, Line edge roughness reduction for 7nm metals, 1058708 (20 March 2018); doi: 10.1117/12.2297424
Advanced Process Control II
Proc. SPIE 10587, Cross-platform (NXE-NXT) machine-to-machine overlay matching supporting next node chip manufacturing, 1058709 (20 March 2018); doi: 10.1117/12.2297387
Proc. SPIE 10587, Overlay control for 7nm technology node and beyond, 105870A (20 March 2018); doi: 10.1117/12.2295828
Proc. SPIE 10587, Smart overlay metrology pairing adaptive deep learning with the physics-based models used by a lithographic apparatus, 105870B (20 March 2018); doi: 10.1117/12.2297513
Proc. SPIE 10587, Reduction in overlay error from mark asymmetry using simulation, ORION, and alignment models, 105870C (20 March 2018); doi: 10.1117/12.2297493
Advanced Process Modeling
Proc. SPIE 10587, Model-based correction for local stress-induced overlay errors, 105870D (20 March 2018); doi: 10.1117/12.2297510
Proc. SPIE 10587, Analysis of hotspots that impact defectivity from light source bandwidth variation using Lithography Manufacturability Checker (LMC) (Conference Presentation), 105870E (20 March 2018); doi: 10.1117/12.2299319
Proc. SPIE 10587, Hot spot variability and lithography process window investigation by CDU improvement using CDC technique, 105870F (20 March 2018); doi: 10.1117/12.2297382
Proc. SPIE 10587, Freeform mask optimization using advanced image based M3D inverse lithography and 3D-NAND full chip OPC application, 105870G (20 March 2018); doi: 10.1117/12.2297397
Computational Lithography I
Proc. SPIE 10587, Deep learning assisted fast mask optimization, 105870H (20 March 2018); doi: 10.1117/12.2297514
Proc. SPIE 10587, Constraint approaches for some inverse lithography problems with pixel-based mask, 105870I (20 March 2018); doi: 10.1117/12.2297262
Proc. SPIE 10587, Exploration of resist effect in source mask optimization, 105870J (20 March 2018); doi: 10.1117/12.2297376
Pattern Correction Methods: Joint session with conferences 10588 and 10587
Proc. SPIE 10587, Model based cell-array OPC development for productivity improvement in memory device fabrication, 105870K (20 March 2018); doi: 10.1117/12.2297638
Proc. SPIE 10587, Model-assisted template extraction SRAF application to contact holes patterns in high-end flash memory device fabrication, 105870L (20 March 2018); doi: 10.1117/12.2297659
Proc. SPIE 10587, Rigorous ILT optimization for advanced patterning and design-process co-optimization, 105870M (20 March 2018); doi: 10.1117/12.2299375
Computational Lithography II
Proc. SPIE 10587, Efficient full-chip SRAF placement using machine learning for best accuracy and improved consistency, 105870N (20 March 2018); doi: 10.1117/12.2299421
Proc. SPIE 10587, Inverse lithography OPC correction with multiple patterning and etch awareness, 105870O (20 March 2018); doi: 10.1117/12.2297368
Proc. SPIE 10587, Thread scheduling for GPU-based OPC simulation on multi-thread, 105870P (20 March 2018); doi: 10.1117/12.2295696
Proc. SPIE 10587, A model-based approach for the scattering-bar printing avoidance, 105870Q (20 March 2018); doi: 10.1117/12.2295451
Proc. SPIE 10587, A novel processing platform for post tape out flows, 105870R (20 March 2018); doi: 10.1117/12.2297240
Non-IC Applications
Proc. SPIE 10587, Sub-micron lines patterning into silica using water developable chitosan bioresist films for eco-friendly positive tone e-beam and UV lithography , 105870S (20 March 2018); doi: 10.1117/12.2292312
Proc. SPIE 10587, SEM contour based metrology for microlens process studies in CMOS image sensor technologies , 105870T (20 March 2018); doi: 10.1117/12.2297396
Proc. SPIE 10587, 'Double' displacement Talbot lithography: a new approach for periodic nanostructure patterning (Conference Presentation), 105870U (20 March 2018); doi: 10.1117/12.2297416
Proc. SPIE 10587, Mask-aligner Talbot lithography using a 193nm CW light source, 105870W (20 March 2018); doi: 10.1117/12.2296503
Toolings I
Proc. SPIE 10587, Enhancement of ArF immersion scanner system for advanced device node manufacturing , 105870X (20 March 2018); doi: 10.1117/12.2297302
Proc. SPIE 10587, Advanced light source technologies for memory and logic processes (Conference Presentation), 105870Y (20 March 2018); doi: 10.1117/12.2298431
Proc. SPIE 10587, The illumination design of UV LED array for lithography, 105870Z (20 March 2018); doi: 10.1117/12.2297170
Proc. SPIE 10587, Next-generation ArF laser technologies for multiple-patterning immersion lithography supporting leading edge processes, 1058710 (20 March 2018); doi: 10.1117/12.2297316
Toolings II
Proc. SPIE 10587, Characterization of absorptance and thermally induced wavefront deformations in DUV lithography optics (Conference Presentation), 1058711 (20 March 2018); doi: 10.1117/12.2300523
Proc. SPIE 10587, New open platform software for monitoring lithography process of semiconductor manufacturing, 1058712 (20 March 2018); doi: 10.1117/12.2299491
Proc. SPIE 10587, Tailing-edge technology applications like broader E95 approach into the cutting edge DUV light source for tool matching on the ArFi lithography (Conference Presentation), 1058713 (20 March 2018); doi: 10.1117/12.2297523
Poster Session
Proc. SPIE 10587, A novel method to fast fix the post OPC weak-points through Calibre eqDRC application, 1058715 (20 March 2018); doi: 10.1117/12.2292695
Proc. SPIE 10587, DUV light source sustainability achievements and next steps, 1058716 (21 March 2018); doi: 10.1117/12.2299387
Proc. SPIE 10587, The optical design of 3D ICs for smartphone and optro-electronics sensing module, 1058717 (20 March 2018); doi: 10.1117/12.2297335
Proc. SPIE 10587, Improving 130nm node patterning using inverse lithography techniques for an analog process, 1058718 (20 March 2018); doi: 10.1117/12.2297219
Proc. SPIE 10587, The method of optimizing mask parameter suitable for lithography process, 1058719 (20 March 2018); doi: 10.1117/12.2296861
Proc. SPIE 10587, Efficient level-set based mask optimization with a vector imaging model, 105871C (20 March 2018); doi: 10.1117/12.2297273
Proc. SPIE 10587, The partial coherence modulation transfer function in testing lithography lens, 105871D (20 March 2018); doi: 10.1117/12.2297165
Proc. SPIE 10587, Optical design of objectives for reducing photolithography, 105871E (20 March 2018); doi: 10.1117/12.2301026
Proc. SPIE 10587, Enabling proximity mask-aligner lithography with a 193nm CW light source, 105871F (20 March 2018); doi: 10.1117/12.2297171
Proc. SPIE 10587, In-resist pattern shift metrology, 105871G (20 March 2018); doi: 10.1117/12.2304364
Proc. SPIE 10587, Inverse lithography recipe optimization using genetic algorithm, 105871H (20 March 2018); doi: 10.1117/12.2297141
Proc. SPIE 10587, A novel positive tone development method for defect reduction in the semiconductor 193nm immersion lithography process, 105871I (20 March 2018); doi: 10.1117/12.2297280
Proc. SPIE 10587, Extremely long life excimer laser technology for multi-patterning lithography, 105871J (20 March 2018); doi: 10.1117/12.2297341
Proc. SPIE 10587, Prediction of lens heating induced aberration via particle filter in optical lithography, 105871K (20 March 2018); doi: 10.1117/12.2297338
Proc. SPIE 10587, OPC model accuracy enhancement for asymmetrical layouts by incorporating 2D contour extraction methodology, 105871L (20 March 2018); doi: 10.1117/12.2296815