In this paper, we describe a method to model these localized silicon distortions for complex layouts involving billions of deep trench structures. We describe wafer metrology techniques and data which have been used to verify the stress distortion model accuracy. We also provide a description of how this kind of model can be used to manipulate the polygons in the mask tape out flow to compensate for predicted localized misalignments between design shapes from a deep trench mask and subsequent masks.
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Ian Stobert, Subramanian Krishnamurthy, Hongbo Shi, Scott Stiffler, "Model-based correction for local stress-induced overlay errors," Proc. SPIE 10587, Optical Microlithography XXXI, 105870D (20 March 2018);