In a first section, we compare the CDC technique with scanner dose correction schemes. It becomes obvious, that the CDC technique has unique advantages with respect to spatial resolution and intra-field flexibility over scanner correction schemes, however, due to the scanner flexibility across wafer both methods are rather complementary than competing. In a second section we show that a reference feature based correction scheme can be used to improve the CDU of a full chip with multiple different features that have different MEEF and dose sensitivities. In detail we will discuss the impact of forward scattering light originated by the CDC pixels on the illumination source and the related proximity signature. We will show that the impact on proximity is small compared to the CDU benefit of the CDC technique.
Finally we show to which extend the reduced variability across reticle will result in a better common electrical process window of a whole chip design on the whole reticle field on wafer. Finally we will discuss electrical verification results between masks with purposely made bad CDU that got repaired by the CDC technique versus inherently good “golden” masks on a complex logic device. No yield difference is observed between the repaired bad masks and the masks with good CDU.