20 March 2018 Model based cell-array OPC development for productivity improvement in memory device fabrication
Author Affiliations +
Traditionally, optical proximity correction (OPC) on cell array patterns in memory layout uses simple bias rules to correct hierarchically-placed features, but requires intensive, rigorous lithographic simulations to maximize the wafer process latitude. This process requires time-consuming procedures to be performed on the full chip (excluding the cell arrays) to handle unique cell features and layout placements before (and even sometimes after) OPC. The time required limits productivity for both mask tapeouts and the wafer process development. In this paper, a new cell array OPC flow is introduced that reduces turnaround-time for mask tapeouts from days to hours, while maintaining acceptable OPC quality and the perfect geometric consistency on the OPC output that is critical for memory manufacturing. The flow comprises an effective sub-resolution assist features (SRAFs) insertion and OPC for both the cell array and the peripheral pattern areas. Both simulation and experimental results from actual wafer verification are discussed.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ahmed Seoud, Ahmed Seoud, Sherif Hany, Sherif Hany, Juhwan Kim, Juhwan Kim, Jebum Yoon, Jebum Yoon, Boram Jung, Boram Jung, Sang-Jin Oh, Sang-Jin Oh, Byoung-Sub Nam, Byoung-Sub Nam, Seyoung Oh, Seyoung Oh, Chan-Ha Park, Chan-Ha Park, "Model based cell-array OPC development for productivity improvement in memory device fabrication", Proc. SPIE 10587, Optical Microlithography XXXI, 105870K (20 March 2018); doi: 10.1117/12.2297638; https://doi.org/10.1117/12.2297638


Model-based SRAF solutions for advanced technology nodes
Proceedings of SPIE (September 30 2013)
Using heuristic optimization to set SRAF rules
Proceedings of SPIE (March 23 2017)
MEEF-based mask inspection
Proceedings of SPIE (December 05 2004)

Back to Top