A model-based approach for the scattering-bar printing avoidance

Yaojun Du; Liang Li; Jingjing Zhang; Feng Shao; Christian Zuniga; Yunfei  Deng

doi:10.1117/12.2295451

20 March 2018 A model-based approach for the scattering-bar printing avoidance

Yaojun Du; Liang Li; Jingjing Zhang; Feng Shao; Christian Zuniga; Yunfei Deng

Author Affiliations +

Proceedings Volume 10587, Optical Microlithography XXXI; 105870Q (2018) https://doi.org/10.1117/12.2295451
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

As the technology node for the semiconductor manufacturing approaches advanced nodes, the scattering-bars (SBs) are more crucial than ever to ensure a good on-wafer printability of the line space pattern and hole pattern. The main pattern with small pitches requires a very narrow PV (process variation) band. A delicate SB addition scheme is thus needed to maintain a sufficient PW (process window) for the semi-iso- and iso-patterns. In general, the wider, longer, and closer to main feature SBs will be more effective in enhancing the printability; on the other hand, they are also more likely to be printed on the wafer; resulting in undesired defects transferable to subsequent processes. In this work, we have developed a model based approach for the scattering-bar printing avoidance (SPA). A specially designed optical model was tuned based on a broad range of test patterns which contain a variation of CDs and SB placements showing printing and non-printing scattering bars. A printing threshold is then obtained to check the extra-printings of SBs. The accuracy of this threshold is verified by pre-designed test patterns. The printing threshold associated with our novel SPA model allows us to set up a proper SB rule.

Conference Presentation

Citation Download Citation

Yaojun Du, Liang Li, Jingjing Zhang, Feng Shao, Christian Zuniga, Yunfei Deng, "A model-based approach for the scattering-bar printing avoidance", Proc. SPIE 10587, Optical Microlithography XXXI, 105870Q (20 March 2018); doi: 10.1117/12.2295451; https://doi.org/10.1117/12.2295451

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