20 March 2018 The method of optimizing mask parameter suitable for lithography process
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Abstract
In the mask manufacturing process, the thickness and sidewall angle of mask are usually determined under the condition of vertical incidence. In fact, the incident angle of light on the mask plane is oblique, especially for the freeform source in source mask optimization (SMO). At this time, the thickness and sidewall angle of mask given by previous methods will not be optimal. This paper presents a method of optimizing mask parameters, which makes the transmittance and phase shift are more optimal for lithography process. In this paper, the influence of variations on mask parameters on lithography process is evaluated by the process window. And the process window corresponding to the optimal mask structure given by our method is larger than that of the original mask structure. The conclusion that the previous mask parameters are not the optimal for lithography process is demonstrated by the simulation results.
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Jianfang He, Jianfang He, Lisong Dong, Lisong Dong, Libin Zhang, Libin Zhang, Lijun Zhao, Lijun Zhao, Yayi Wei, Yayi Wei, Tianchun Ye, Tianchun Ye, } "The method of optimizing mask parameter suitable for lithography process", Proc. SPIE 10587, Optical Microlithography XXXI, 1058719 (20 March 2018); doi: 10.1117/12.2296861; https://doi.org/10.1117/12.2296861
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