20 March 2018 Enabling proximity mask-aligner lithography with a 193nm CW light source
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Abstract
We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuration is frequency-quadrupled using lithiumtriborate and potassium-uoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions <2 µm printed with proximity gaps of 20 µm.
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Raoul Kirner, Raoul Kirner, Andreas Vetter, Andreas Vetter, Dmitrijs Opalevs, Dmitrijs Opalevs, Matthias Scholz, Matthias Scholz, Patrick Leisching, Patrick Leisching, Toralf Scharf, Toralf Scharf, Wilfried Noell, Wilfried Noell, Carsten Rockstuhl, Carsten Rockstuhl, Reinhard Voelkel, Reinhard Voelkel, } "Enabling proximity mask-aligner lithography with a 193nm CW light source", Proc. SPIE 10587, Optical Microlithography XXXI, 105871F (20 March 2018); doi: 10.1117/12.2297171; https://doi.org/10.1117/12.2297171
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