20 March 2018 In-resist pattern shift metrology
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Abstract
Scanner induced pattern shifts between layers are a large contributor to DRAM Bitline to Active overlay. One of the main root causes for this Pattern Shift non-Uniformity are lens aberrations. Currently measuring the Bitline to Active overlay requires a decap CDSEM method1. In this paper, an in-resist pattern shift uniformity metrology method is proposed which quantifies the main DRAM Bitline to Active overlay without the necessity to decap. We have designed a high transmission reticle (≥ 60%) to measure the pattern shift non-uniformity between two dense gratings under the rotation angle of the Active layer in both cold and hot lens states. Each module on the reticle contains product-like features and a variety of metrology targets, i.e. alignment and overlay, such that the product-to-product and the productto- metrology pattern shift fingerprints can be measured. OPC is applied to enlarge the overlapping process windows of the metrology targets with respect to the product-like features.
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Anita Bouma, Anita Bouma, Bart Smeets, Bart Smeets, Lei Zhang, Lei Zhang, Thuy T. T. Vu, Thuy T. T. Vu, Peter de Loijer, Peter de Loijer, Maikel Goosen, Maikel Goosen, Willem van Mierlo, Willem van Mierlo, Wendy Liebregts, Wendy Liebregts, Bart Rijpers, Bart Rijpers, } "In-resist pattern shift metrology", Proc. SPIE 10587, Optical Microlithography XXXI, 105871G (20 March 2018); doi: 10.1117/12.2304364; https://doi.org/10.1117/12.2304364
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