Proceedings Volume 10589 is from: Logo
25 February - 1 March 2018
San Jose, California, United States
Front Matter: 10589
Proc. SPIE 10589, Front Matter: 10589, 1058901 (30 April 2018);
Advanced Plasma Patterning Techniques
Proc. SPIE 10589, 3D memory: etch is the new litho, 1058904 (20 March 2018);
Materials and Etch Integration: Joint session with conferences 10586 and 10589
Proc. SPIE 10589, Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures, 1058907 (22 March 2018);
Proc. SPIE 10589, Selective dry etching of silicon containing anti-reflective coating, 1058908 (20 March 2018);
Proc. SPIE 10589, New frontiers of atomic layer etching, 1058909 (20 March 2018);
Innovations in Plasma and Patterning Materials
Proc. SPIE 10589, Exploration of post-lithography smoothening methods applied to 16nm half-pitch EUV lines and spaces (Conference Presentation), 105890A ();
Proc. SPIE 10589, Graphoepitaxy integration and pattern transfer of lamellar silicon-containing high-chi block copolymers, 105890C (20 March 2018);
Patterning Process Control
Proc. SPIE 10589, Wafer edge overlay control solution for N7 and beyond, 105890D (20 March 2018);
Proc. SPIE 10589, Exploration of BEOL line-space patterning options at 12 nm half-pitch and below, 105890E (20 March 2018);
Proc. SPIE 10589, Advanced process and defect characterization methodology to support process development of advanced patterning structures, 105890F (20 March 2018);
Novel Plasma Patterning Techniques: Atomic Layer Etching
Proc. SPIE 10589, Thermal atomic layer etching using sequential, self-limiting surface reactions (Conference Presentation), 105890G ();
Proc. SPIE 10589, A cellular automata simulation of atomic layer etching, 105890H (20 March 2018);
Proc. SPIE 10589, Isotropic atomic level etching of tungsten using formation and desorption of tungsten fluoride, 105890I (20 March 2018);
Proc. SPIE 10589, Minimum reaction network necessary to describe Ar/CF4 plasma etch, 105890J (20 March 2018);
Patterning and Etch for EUV: Joint session with conferences 10583 and 10589
Proc. SPIE 10589, Introduction of pre-etch deposition techniques in EUV patterning, 105890K (9 April 2018);
Proc. SPIE 10589, Self-aligned blocking integration demonstration for critical sub-30nm pitch Mx level patterning with EUV self-aligned double patterning, 105890L (4 April 2018);
Proc. SPIE 10589, EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch, 105890M (17 April 2018);
Patterning Solutions for Emerging Product Applications
Proc. SPIE 10589, Ion-beam nanopatterning: experimental results with chemically-assisted beam, 105890P (20 March 2018);
Poster Session
Proc. SPIE 10589, Cost modeling 22nm pitch patterning approaches, 105890R (20 March 2018);
Proc. SPIE 10589, Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer, 105890S (20 March 2018);
Proc. SPIE 10589, Line roughness improvements on self-aligned quadruple patterning by wafer stress engineering, 105890T (9 April 2018);
Proc. SPIE 10589, Modeling of block copolymer dry etching for directed self-assembly lithography, 105890U (20 March 2018);
Proc. SPIE 10589, Computational nanometrology of line-edge roughness: noise effects, cross-line correlations and the role of etch transfer, 105890Y (20 March 2018);
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