22 March 2018 Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures
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Abstract
A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.
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Gregory Blachut, Stephen M. Sirard, Andrew Liang, Chris A. Mack, Michael J. Maher, Paulina A. Rincon-Delgadillo, Boon Teik Chan, Geert Mannaert, Geert Vandenberghe, C. Grant Willson, Christopher J. Ellison, Diane Hymes, "Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures", Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 1058907 (22 March 2018); doi: 10.1117/12.2297489; https://doi.org/10.1117/12.2297489
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