20 March 2018 Graphoepitaxy integration and pattern transfer of lamellar silicon-containing high-chi block copolymers
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Abstract
In this work, we present our recent achievements on the integration and transfer etching of a novel silicon-containing high-χ block copolymer for lines/spaces applications. Developed carbo-silane BCPs are synthesized under industrial conditions and present periodicities as low as 14 nm. A full directed self-assembly by graphoepitaxy process is shown using standard photolithography stacks and all processes are performed on 300 mm wafer compatible tools. Specific plasma processes are developed to isolate perpendicular lamellae and sub-12 nm features are finally transferred into silicon substrates. The quality of the final BCP hard mask (CDU, LWR, LER) are also investigated. Finally, thanks to the development of dedicated neutral layers and top-coats allowing perpendicular orientations, it was possible to investigate plasma etching experiments on full-sheets at 7 nm resolution, opening the way to the integration of these polymers in chemoepitaxy stacks.
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P. Bézard, P. Bézard, X. Chevalier, X. Chevalier, A. Legrain, A. Legrain, C. Navarro, C. Navarro, C. Nicolet, C. Nicolet, G. Fleury, G. Fleury, I. Cayrefourcq, I. Cayrefourcq, R. Tiron, R. Tiron, M. Zelsmann, M. Zelsmann, } "Graphoepitaxy integration and pattern transfer of lamellar silicon-containing high-chi block copolymers", Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 105890C (20 March 2018); doi: 10.1117/12.2299337; https://doi.org/10.1117/12.2299337
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