As plasma etching is known to reduce line edge roughness on 193nm lithography printed features , we investigate in this paper the level of roughness that can be achieved on EUV photoresist exposed at a lower dose through etch process optimization into a typical back end of line film stack. We will study 16nm lines printed at 32 and 34nm pitch. MOX and CAR photoresist performance will be compared. We will review step by step etch chemistry development to reach adequate selectivity and roughness reduction to successfully pattern the target layer.
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Sophie Thibaut, Angélique Raley, Frederic Lazarrino, Ming Mao, Danilo De Simone, Daniele Piumi , Kathy Barla, Akiteru Ko, Andrew Metz, Kaushik Kumar, Peter Biolsi, "EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch," Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 105890M (17 April 2018);