1 December 2017 Detection of microstructural defects in chalcopyrite Cu(In,Ga)Se2 solar cells by spectrally-filtered electroluminescence
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Proceedings Volume 10603, Photonics, Devices, and Systems VII; 1060317 (2017) https://doi.org/10.1117/12.2286841
Event: Photonics Prague 2017, 2017, Prague, Czech Republic
Abstract
The aim of this research is to detect and localize microstructural defects by using an electrically excited light emission from a forward/reverse-bias stressed pn-junction in thin-film Cu(In; Ga)Se2 solar cells with metal wrap through architecture. A different origin of the local light emission from intrinsic/extrinsic imperfections in these chalcopyrite-based solar cells can be distinguished by a spectrally-filtered electroluminescence mapping. After a light emission mapping and localization of the defects in a macro scale is performed a micro scale exploration of the solar cell surface by a scanning electron microscope which follows the particular defects obtained by an electroluminescence. In particular, these macroscopic/microscopic examinations are performed independently, then the searching of the corresponding defects in the micro scale is rather difficult due to a diffused light emission obtained from the macro scale localization. Some of the defects accompanied by a highly intense light emission very often lead to a strong local overheating. Therefore, the lock-in infrared thermography is also performed along with an electroluminescence mapping.
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L. Skvarenina, A. Gajdos, R. Macku, P. Skarvada, "Detection of microstructural defects in chalcopyrite Cu(In,Ga)Se2 solar cells by spectrally-filtered electroluminescence", Proc. SPIE 10603, Photonics, Devices, and Systems VII, 1060317 (1 December 2017); doi: 10.1117/12.2286841; https://doi.org/10.1117/12.2286841
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