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1 December 2017 Reflectance analysis of porosity gradient in nanostructured silicon layers
Stanislav Jurečka, Kentaro Imamura, Taketoshi Matsumoto, Hikaru Kobayashi
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Proceedings Volume 10603, Photonics, Devices, and Systems VII; 106031B (2017) https://doi.org/10.1117/12.2292723
Event: Photonics Prague 2017, 2017, Prague, Czech Republic
Abstract
In this work we study optical properties of nanostructured layers formed on silicon surface. Nanostructured layers on Si are formed in order to reach high suppression of the light reflectance. Low spectral reflectance is important for improvement of the conversion efficiency of solar cells and for other optoelectronic applications. Effective method of forming nanostructured layers with ultralow reflectance in a broad interval of wavelengths is in our approach based on metal assisted etching of Si. Si surface immersed in HF and H2O2 solution is etched in contact with the Pt mesh roller and the structure of the mesh is transferred on the etched surface. During this etching procedure the layer density evolves gradually and the spectral reflectance decreases exponentially with the depth in porous layer. We analyzed properties of the layer porosity by incorporating the porosity gradient into construction of the layer spectral reflectance theoretical model. Analyzed layer is splitted into 20 sublayers in our approach. Complex dielectric function in each sublayer is computed by using Bruggeman effective media theory and the theoretical spectral reflectance of modelled multilayer system is computed by using Abeles matrix formalism. Porosity gradient is extracted from the theoretical reflectance model optimized in comparison to the experimental values. Resulting values of the structure porosity development provide important information for optimization of the technological treatment operations.
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Stanislav Jurečka, Kentaro Imamura, Taketoshi Matsumoto, and Hikaru Kobayashi "Reflectance analysis of porosity gradient in nanostructured silicon layers", Proc. SPIE 10603, Photonics, Devices, and Systems VII, 106031B (1 December 2017); https://doi.org/10.1117/12.2292723
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KEYWORDS
Nanostructuring
Reflectivity
Silicon
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