18 January 2018 Heterojunction photodiode on cleaved SiC
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Proceedings Volume 10612, Thirteenth International Conference on Correlation Optics; 106120K (2018); doi: 10.1117/12.2304818
Event: Thirteenth International Conference on Correlation Optics, 2017, Chernivtsi, Ukraine
Abstract
Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.
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Mykhailo M. Solovan, John Farah, Taras T. Kovaliuk, Viktor V. Brus, Andrii I. Mostovyi, Eduard V. Maistruk, Pavlo D. Maryanchuk, "Heterojunction photodiode on cleaved SiC", Proc. SPIE 10612, Thirteenth International Conference on Correlation Optics, 106120K (18 January 2018); doi: 10.1117/12.2304818; https://doi.org/10.1117/12.2304818
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