18 January 2018 Physical properties of the heterojunction МоОх/n-CdTe as a function of the parameters of CdTe crystals
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Proceedings Volume 10612, Thirteenth International Conference on Correlation Optics; 106120Q (2018) https://doi.org/10.1117/12.2304915
Event: Thirteenth International Conference on Correlation Optics, 2017, Chernivtsi, Ukraine
Abstract
MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ω⋅cm, ρ2=10 Ω⋅cm, ρ3=40 Ω⋅cm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.
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Andrii I. Mostovyi, Mykhailo M. Solovan, Viktor V. Brus, Tõnu Pullerits, Pavlo D. Maryanchuk, "Physical properties of the heterojunction МоОх/n-CdTe as a function of the parameters of CdTe crystals", Proc. SPIE 10612, Thirteenth International Conference on Correlation Optics, 106120Q (18 January 2018); doi: 10.1117/12.2304915; https://doi.org/10.1117/12.2304915
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