18 January 2018 Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts
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Proceedings Volume 10612, Thirteenth International Conference on Correlation Optics; 106120V (2018) https://doi.org/10.1117/12.2305085
Event: Thirteenth International Conference on Correlation Optics, 2017, Chernivtsi, Ukraine
The present paper analyzes the сharge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.
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Olena L. Maslyanchuk, Olena L. Maslyanchuk, Mykhailo M. Solovan, Mykhailo M. Solovan, Eduard V. Maistruk, Eduard V. Maistruk, Viktor V. Brus, Viktor V. Brus, Pavlo D. Maryanchuk, Pavlo D. Maryanchuk, Volodymyr A. Gnatyuk, Volodymyr A. Gnatyuk, Toru Aoki, Toru Aoki, "Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts", Proc. SPIE 10612, Thirteenth International Conference on Correlation Optics, 106120V (18 January 2018); doi: 10.1117/12.2305085; https://doi.org/10.1117/12.2305085


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