16 April 2018 The effect of tungsten on the properties of gold-doped silicon
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Proceedings Volume 10614, International Conference on Atomic and Molecular Pulsed Lasers XIII; 106140O (2018) https://doi.org/10.1117/12.2302949
Event: XIII International Conference on Atomic and Molecular Pulsed Lasers, 2017, Tomsk, Russia
Abstract
The effect of the tungsten coating on the photoelectric and electrophysical properties of electron-silicon samples after gold diffusion was analyzed. The trap levels associated with tungsten atoms, with a tungsten complex + vacancy, and with an oxygen + vacancy complex were detected. In samples of silicon doped with gold, both with and without a tungsten coating, the resistivity increased by 2-3 orders of magnitude, which indicates the creation of additional energy centers associated with gold and gold complexes caused by tungsten. At the same time, the time of nonstationary relaxation photoconductivity has greatly decreased, which also indicates the creation of additional recombination centers and trap levels.
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S. I. Rasmagin, S. I. Rasmagin, V. I. Krasovskii, V. I. Krasovskii, V. V. Zuev, V. V. Zuev, M. A. Kononov, M. A. Kononov, I. N. Feofanov, I. N. Feofanov, M. A. Kazaryan, M. A. Kazaryan, } "The effect of tungsten on the properties of gold-doped silicon", Proc. SPIE 10614, International Conference on Atomic and Molecular Pulsed Lasers XIII, 106140O (16 April 2018); doi: 10.1117/12.2302949; https://doi.org/10.1117/12.2302949
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