10 January 2018 Study of the thermal-induced intensity balanced Nd:GdVO4 microchip dual-frequency laser
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Abstract
The intensity balance ratio (IBR) tuning mechanism of Nd:GdVO4 monolithic microchip dual-frequency laser (DFL) is presented. The intensity balanced DFL signals are obtained by precisely controlling the heat sink temperature of the Nd:GdVO4 crystal. In experiments, the DFL signal with frequency separation at 64 GHz and IBR above 0.99 is realized with the temperature at 47.6 °C. The other balanced intensity distribution can be reached at -0.9 °C before mode hopping. Moreover, utilizing the fluorescence spectrum and the intensity balance points of Nd:GdVO4 DFL, we obtain the temperature difference between internal and external of Nd:GdVO4 crystal ΔT = 24.0 °C.
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Meiling Cai, Meiling Cai, Miao Hu, Miao Hu, Xuefang Zhou, Xuefang Zhou, Yang Lu, Yang Lu, Ran Zeng, Ran Zeng, Qiliang Li, Qiliang Li, Yizhen Wei, Yizhen Wei, } "Study of the thermal-induced intensity balanced Nd:GdVO4 microchip dual-frequency laser", Proc. SPIE 10617, 2017 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Optical Signal Processing, 1061706 (10 January 2018); doi: 10.1117/12.2295569; https://doi.org/10.1117/12.2295569
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