10 January 2018 Study of the thermal-induced intensity balanced Nd:GdVO4 microchip dual-frequency laser
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The intensity balance ratio (IBR) tuning mechanism of Nd:GdVO4 monolithic microchip dual-frequency laser (DFL) is presented. The intensity balanced DFL signals are obtained by precisely controlling the heat sink temperature of the Nd:GdVO4 crystal. In experiments, the DFL signal with frequency separation at 64 GHz and IBR above 0.99 is realized with the temperature at 47.6 °C. The other balanced intensity distribution can be reached at -0.9 °C before mode hopping. Moreover, utilizing the fluorescence spectrum and the intensity balance points of Nd:GdVO4 DFL, we obtain the temperature difference between internal and external of Nd:GdVO4 crystal ΔT = 24.0 °C.
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Meiling Cai, Meiling Cai, Miao Hu, Miao Hu, Xuefang Zhou, Xuefang Zhou, Yang Lu, Yang Lu, Ran Zeng, Ran Zeng, Qiliang Li, Qiliang Li, Yizhen Wei, Yizhen Wei, "Study of the thermal-induced intensity balanced Nd:GdVO4 microchip dual-frequency laser", Proc. SPIE 10617, 2017 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Optical Signal Processing, 1061706 (10 January 2018); doi: 10.1117/12.2295569; https://doi.org/10.1117/12.2295569

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