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10 January 2018 Study of the thermal-induced intensity balanced Nd:GdVO4 microchip dual-frequency laser
Meiling Cai, Miao Hu, Xuefang Zhou, Yang Lu, Ran Zeng, Qiliang Li, Yizhen Wei
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Proceedings Volume 10617, 2017 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Optical Signal Processing; 1061706 (2018) https://doi.org/10.1117/12.2295569
Event: International Conference on Optical Instruments and Technology 2017, 2017, Beijing, China
Abstract
The intensity balance ratio (IBR) tuning mechanism of Nd:GdVO4 monolithic microchip dual-frequency laser (DFL) is presented. The intensity balanced DFL signals are obtained by precisely controlling the heat sink temperature of the Nd:GdVO4 crystal. In experiments, the DFL signal with frequency separation at 64 GHz and IBR above 0.99 is realized with the temperature at 47.6 °C. The other balanced intensity distribution can be reached at -0.9 °C before mode hopping. Moreover, utilizing the fluorescence spectrum and the intensity balance points of Nd:GdVO4 DFL, we obtain the temperature difference between internal and external of Nd:GdVO4 crystal ΔT = 24.0 °C.
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Meiling Cai, Miao Hu, Xuefang Zhou, Yang Lu, Ran Zeng, Qiliang Li, and Yizhen Wei "Study of the thermal-induced intensity balanced Nd:GdVO4 microchip dual-frequency laser", Proc. SPIE 10617, 2017 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Optical Signal Processing, 1061706 (10 January 2018); https://doi.org/10.1117/12.2295569
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KEYWORDS
Crystals
Luminescence
Temperature metrology
Neodymium
Laser crystals
Laser resonators
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