12 January 2018 Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition
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Abstract
ZnO has attracted much attention because of its high-energy gap and exciton binding energy at room temperature. Compared to ZnO thin films, ZnGaO thin films are more resistive to oxidation and have smaller deformation of lattice. In this study, the high purity ZnSe and Ga2O3 powders were weighted at a molar ratio of 18:1. Se was oxidized to Se2O3 and separated from the mixture powders by using conventional solid state reaction method in air, and the ZnGaO ceramic target was prepared. We fabricated the ZnGaO films on silica glass by pulsed laser deposition (PLD) method under different oxygen pressure at room temperature. The as-grown films were tested by X-ray diffraction and atomic force microscope (AFM) to diagnose the crystal structure and surface morphology. Moreover, we obtained the optical transmittance of ZnGaO film and found that the electrical conductivity capacity varied with the increase of oxygen pressure.
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Xiaowei Han, Xiaowei Han, Li Wang, Li Wang, Shufeng Li, Shufeng Li, Dongwen Gao, Dongwen Gao, Yong Pan, Yong Pan, } "Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition", Proc. SPIE 10622, 2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 1062207 (12 January 2018); doi: 10.1117/12.2284289; https://doi.org/10.1117/12.2284289
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