12 January 2018 Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell
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Abstract
Quantum Dots (QDs) intermediate band solar cells (IBSC) are the most attractive candidates for the next generation of photovoltaic applications. In this paper, theoretical model of InAs/GaAs device has been proposed, where we have calculated the effect of variation in the thickness of intrinsic and IB layer on the efficiency of the solar cell using detailed balance theory. IB energies has been optimized for different IB layers thickness. Maximum efficiency 46.6% is calculated for IB material under maximum optical concentration.
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Ali Imran, Ali Imran, Jianliang Jiang, Jianliang Jiang, Debora Eric, Debora Eric, Muhammad Yousaf, Muhammad Yousaf, } "Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell", Proc. SPIE 10622, 2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 106220A (12 January 2018); doi: 10.1117/12.2288107; https://doi.org/10.1117/12.2288107
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