12 January 2018 The preparation method of terahertz monolithic integrated device
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Proceedings Volume 10623, 2017 International Conference on Optical Instruments and Technology: IRMMW-THz Technologies and Applications; 106230G (2018) https://doi.org/10.1117/12.2295156
Event: International Conference on Optical Instruments and Technology 2017, 2017, Beijing, China
Abstract
The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure,the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.
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Cong Zhang, Bo Su, Jingsuo He, Hongfei Zhang, Yaxiong Wu, Shengbo Zhang, Cunlin Zhang, "The preparation method of terahertz monolithic integrated device", Proc. SPIE 10623, 2017 International Conference on Optical Instruments and Technology: IRMMW-THz Technologies and Applications, 106230G (12 January 2018); doi: 10.1117/12.2295156; https://doi.org/10.1117/12.2295156
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