Abstract
Recent advances over the last several years in III-V strained-layer superlattice-based infrared detectors have lead this material system to emerge as a solid alternative to HgCdTe for dual-band focal plane arrays (FPAs). Rapid development of superlattice-based detectors has been realized by capitalizing on mature, III-V foundry-compatible processing. Furthermore, superlattice-based epitaxial wafers exhibit a high degree of lateral uniformity with low macroscopic defect densities (< 50 cm-2) and can achieve dark current levels comparable to HgCdTe detectors. In this paper, we review our recent efforts towards producing HD-format (1280x720, 12 μm pitch) superlattice-based, dual-band MWIR/LWIR FPAs. For a representative FPA, characterization was conducted in a pour-fill dewar at 80K, f/3 and using a blackbody range of 22°C to 32°C. For the MWIR band, the noise equivalent temperature difference (NETD) was 14.9 mK with a 3x median NETD operability of 99.91%. For the LWIR band, the median NETD was 28.1 mK with a 3x median NETD operability of 99.66%. To illustrate the manufacturability of superlattice technology, we will present results on 1280x720, 12 μm pitch MWIR/LWIR FPAs built over the last year at HRL through multiple fabrication lots utilizing 4" epiwafers.
