14 May 2018 Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance
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Abstract
Although HgCdTe imagers are a well-established technology, photodetectors fabricated using the same process still yield a large variation in their performance characteristics, largely stemming from hard-to-control pecu- liarities at the interface between the surface passivation and the active region of each photodiode. This work investigates the dark current characteristics of long-wave IR (cutoff wavelength of 10um) Hg0.774Cd0.226Te mesa photodiodes, which have been passivated with a CdTe film. We use a 2-D model of a p-on-n device structure to study how interface states and Cadmium diffusion at the passivation interface can influence the photodiode dark current.
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Ilya Prigozhin, Ilya Prigozhin, Andreu Glasmann, Andreu Glasmann, Enrico Bellotti, Enrico Bellotti, "Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106240T (14 May 2018); doi: 10.1117/12.2305127; https://doi.org/10.1117/12.2305127
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