29 May 2018 Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity
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Abstract
This paper presents the physical device modeling of a Si/Si1-xGex multi-quantum well (MQW) detector to optimize the Ge content in the Si/Si1-xGex well required to enhance thermal sensitivity for a potential microbolometer application. The modeling approach comprises a self-consistent coupled Poisson-Schroedinger solution in series with the thermionic emission theory at the Si/Si1-xGex heterointerface and quantum confinement within the Si/Si1-xGex MQW. The integrated simulation environment developed in Sentauruas WorkBench (SWB) TCAD is employed to investigate the transfer characteristics of the device consisting three stacks of Si/Si1-xGex wells with an active area of 17μm x 17μm were investigated and compared with experiment data.
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Atia Shafique, Atia Shafique, Shahbaz Abbasi, Shahbaz Abbasi, Omer Ceylan, Omer Ceylan, Canan B. Kaynak, Canan B. Kaynak, Mehmet Kaynak, Mehmet Kaynak, Yasar Gurbuz, Yasar Gurbuz, "Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241A (29 May 2018); doi: 10.1117/12.2305003; https://doi.org/10.1117/12.2305003
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