14 May 2018 Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation
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Abstract
In this study, we report high temperature operation of infrared photodetector using p-i-p InAs/GaAs quantum dots. The ground state emission peak at 18 K from photoluminescence spectroscopy was measured at 986 nm. Single pixel detectors were fabricated and device characteristics like temperature dependent dark current, blackbody and spectral response were analyzed. The measured dark current density at 220 K with applied bias of 0.2 V was 2.48×10-3 A/cm2. The spectral response peak (2 μm) was observed in short wave-infrared (SWIR) region. We report an excellent SWIR detection characteristics at 220 K with a responsivity and specific detectivity of 3.81 A/W and 2.18×1010 cmHz1/2/W, respectively. The spectral response peak was achieved till 250 K and blackbody signal was observed till 270 K.
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Vidya P. Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Harshal Rawool, Subhananda Chakrabarti, "Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241Q (14 May 2018); doi: 10.1117/12.2305289; https://doi.org/10.1117/12.2305289
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