InGaAs detector for SWIR imaging is widely used for remote sensing, medical application, personal identification etc. To reduce the required power for various environmental condition, reducing dark current is crucial. The dark current of InGaAs detector is known to come from defects induced during the growth of wafers and the process to fabricate FPAs. Especially, when high temperature is applied for the diffusion of Zn to form p-type junction on n-type InP/InGaAs substrate, the diffusion barrier of Zn on the substrate experiences large expansion and add stress in the substrate. The induced stress will increase defects and increase dark current. In this work, to reduce the stress of the Zn diffusion barrier, balanced diffusion barrier with multiple layer is applied. By reducing the stress, the dark current density has reduced to below 10 nA/cm2, which is suitable for low power operation.