This work proves useful in predicting the range of mechanical and electronic properties of wafers cut from ingots that are grown on-axis. More specifically, by understanding the effect of the melt/solid growth interface on the physical properties on the crystal, growth conditions can be optimized to produce more electrically uniform wafers that minimize pixel-to-pixel variation in FPAs.
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Nathan W. Gray, Andrew Prax, W. Brock Alexander, Jason Merrell, "Interface engineering in InSb crystal growth for focal plane array device performance," Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241U (23 May 2018);