18 June 2018 A study on ALD ZnS passivation of HgCdTe IRFPAs detectors
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Abstract
As a narrow bandgap semiconductor, the preparation of surface passivation layers on HgCdTe film epilayers is essential in the process of device fabrication. Most new infrared detectors use the mesa structure. A stable and reproducible passivation technology which meets the surface uniform cover of the high aspect ratio mesa is particularly important. Atomic layer deposition (ALD) is a new type of accurate surface thin film preparation technique, which has several characteristics such as depositing large-area uniform films, making the film thickness control at nanometer level feasible, and lower deposition temperature. ALD-ZnS film is prepared on the HgCdTe IRFPAs chip at 65°. I-V and R-V curves are similar to that of IRFPAs with CdTe thermal passivation. This shows that ALD ZnS film has a good potential application in the passivation of high aspect ratio mesa-array HgCdTe devices.
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A. L. Cui, A. L. Cui, Z. H. Ye, Z. H. Ye, C. H. Sun, C. H. Sun, L. F. Liu, L. F. Liu, X. N. Hu, X. N. Hu, R. J. Ding, R. J. Ding, L. He, L. He, } "A study on ALD ZnS passivation of HgCdTe IRFPAs detectors", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241Z (18 June 2018); doi: 10.1117/12.2304578; https://doi.org/10.1117/12.2304578
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