29 May 2018 Implementation of SOI diode uncooled IRFPA in TEC-less and shutter-less operation
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We develop a shutter-less method for replacing mechanical shutters. To verify the effectiveness of the proposed method, we fabricated a silicon-on-insulator (SOI) diode uncooled 320 × 240 infrared focal plane array (IRFPA) with 17 μm pixel pitch utilizing a circuit architecture that achieves thermo-electric cooling (TEC)-less operation. Furthermore, we fabricated a prototype uncooled IR camera that implements the proposed method and verified favorable camera operation. The temperature behavior of our proposed SOI diode is highly uniform and predictable, which enables simpler device modeling and consequently simpler TEC-less and shutter-less operation.
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D. Fujisawa, D. Fujisawa, Y. Kosasayama, Y. Kosasayama, T. Takikawa, T. Takikawa, H. Hata, H. Hata, T. Takenaga, T. Takenaga, T. Satake, T. Satake, K. Yamashita, K. Yamashita, D. Suzuki, D. Suzuki, } "Implementation of SOI diode uncooled IRFPA in TEC-less and shutter-less operation", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 1062421 (29 May 2018); doi: 10.1117/12.2305165; https://doi.org/10.1117/12.2305165

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