4 May 2018 CCD-based thermoreflectance imaging of high-power diode lasers with back-irradiance
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Abstract
The two-dimensional (2D) temperature profile of a high-power junction-down broad-area diode laser facet subject to back-irradiance (BI) is studied via CCD-based thermoreflectance (TR) imaging and finite element modeling. The temperature rise in the active region (ΔΤAR) is determined at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations. Interestingly, our study shows that ΔΤAR rises sharpest not when the back-irradiance is boresight-aligned with the active region but rather when it is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). At this critical location, ΔΤAR is found to increase by nearly a factor of three compared to its increase without back-irradiance. This provides insight on an important location for back-irradiance that may be correlated with catastrophic optical damage (COD) for diode lasers fabricated on absorbing substrates, and also suggests a thermal basis for truncated lifetime and deegraded performance for diode lasers experiencing backirradiance.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chen Li, Chen Li, Kevin P. Pipe, Kevin P. Pipe, Chuanshun Cao, Chuanshun Cao, Prabhu Thiagarajan, Prabhu Thiagarajan, Robert J. Deri, Robert J. Deri, Paul O. Leisher, Paul O. Leisher, } "CCD-based thermoreflectance imaging of high-power diode lasers with back-irradiance", Proc. SPIE 10637, Laser Technology for Defense and Security XIV, 106370C (4 May 2018); doi: 10.1117/12.2302434; https://doi.org/10.1117/12.2302434
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