Black holes enabled light bending and trapping in ultrafast silicon photodetectors

Hilal Cansizoglu; Yang Gao; Soroush Ghandiparsi; Cesar Bartolo Perez; Hasina H. Mamtaz; Mehmet F. Cansizoglu; Toshishige Yamada; Ekaterina Ponizovskaya Devine; Aly F. Elrefaie; Shih-Yuan Wang; M. Saif Islam

doi:10.1117/12.2309830

31 May 2018 Black holes enabled light bending and trapping in ultrafast silicon photodetectors

Hilal Cansizoglu, Yang Gao, Soroush Ghandiparsi, Cesar Bartolo Perez, Hasina H. Mamtaz, Mehmet F. Cansizoglu, Toshishige Yamada, Ekaterina Ponizovskaya Devine, Aly F. Elrefaie, Shih-Yuan Wang, M. Saif Islam

Author Affiliations +

Proceedings Volume 10639, Micro- and Nanotechnology Sensors, Systems, and Applications X; 106390I (2018) https://doi.org/10.1117/12.2309830
Event: SPIE Defense + Security, 2018, Orlando, FL, United States

Abstract

Micro and nanoscale holes on the surfaces of indirect band gap semiconductors such as silicon can enable perpendicular light bending and trapping of photons to enhance the light material interactions and absorption by orders of magnitude. The ‘bending’ of a vertically oriented light beam at nearly 90 degrees can be visualized as radial waves generated by a pebble dropped into a calm pool of water. Such bending and photon trapping result in an increased optical absorption path enabling very high light absorption coefficients. This observation led to the design of silicon photodetectors with high broadband efficiency above 50% and record ultrafast response contributing to more than 40 billion bits of data per second (Gb/s) communication speed.

Citation Download Citation

Hilal Cansizoglu, Yang Gao, Soroush Ghandiparsi, Cesar Bartolo Perez, Hasina H. Mamtaz, Mehmet F. Cansizoglu, Toshishige Yamada, Ekaterina Ponizovskaya Devine, Aly F. Elrefaie, Shih-Yuan Wang, and M. Saif Islam "Black holes enabled light bending and trapping in ultrafast silicon photodetectors", Proc. SPIE 10639, Micro- and Nanotechnology Sensors, Systems, and Applications X, 106390I (31 May 2018); https://doi.org/10.1117/12.2309830

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Absorption

Palladium

Data communications

Photons

Reflection

Photodetectors

Show All Keywords

Keywords/Phrases

Search In:

Publication Years